A contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist (EH27) as the wt % of base and photoacid generator (PAG) were varied. A six times increase in base wt % is shown to reduce the size of successfully patterned 1:1 line-space features from 52 to 39 nm without changing deprotection ... إقراء المزيد

This paper describes our initial investigation into building a greater understanding of the complex mechanism occurring during extreme ultraviolet (EUV) exposure of resist materials. In particular, we are focusing on the number and energy of photoelectrons generated and available for reaction with photoacid generators (PAGs). We propose that this approach will best enable the industry to develop resists capable of ... إقراء المزيد

A method to evaluate the sensitivity of photoresists used for extreme ultraviolet (EUV) lithography has been developed. EUV sources produce out-of-band radiation and the reflective optics used in EUV tools reflect some of this out-of-band light on the wafer plane. The effect of exposing these photoresists to this unwanted light can reduce the image contrast on the wafer, and thereby ... إقراء المزيد

A library of 200 2-alkyl-3-alkyloxy-2H-indazole-6-carboxamides was synthesized using parallel solution-phase methods. The indazole cyclization reaction was optimized for library production with the best yields resulting from controlled alcohol/water solvent ratios. The key step, a heterocyclization reaction, proceeds by N,N-bond formation and delivers the 2H-indazole scaffold. Automated preparative HPLC was utilized to provide pure compounds on a 10+ mg scale. إقراء المزيد