The structural and electrical properties of the as-prepared and annealed In45Sb35Se20−_x_Te_x_ thin films with different compositions (_x_ = 2.5, 5, 7.5, 10, 12.5 and 15 at.%) prepared by electron beam evaporation method are studied. The XRD patterns of the as-prepared thin film show that the investigated compositions have amorphous and polycrystalline structure depending on the Te content. After annealing the ...
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