Tuning themorphologyofZnOnanostructurebyindoping and theassociatedvariationinelectricalandopticalproperties
In thiswork,Zn100xInx (x¼0, 1,2.5,5and7.5at%)compoundshavebeeninitiallyalloyedbymeltingmethodandusedasprecursorsto prepare differentnanostructuresofindium(In)dopedZnOusingchemicalvapordeposition(CVD).TheeffectofIncontentonthestructural, morphological, opticalaswellaselectricalpropertieshasbeenstudied.XRDandRamanexaminationsdemonstratethesubstitutionofZnþ2 ions by Inþ3 ions atlowerindiumconcentrations,whileIn2O3 appears asseparatephaseathigherInratios.Thenanowirestransformtonanoflakes then nanoflowers astheInconcentrationincreases.Withregardtotheopticalproperties,thetransparencyincreaseswithincreasingInand decreases thereafter.TheopticalbandgapvaluesincreasewithIncontentreachingitsmaximumvalue(3.28eV)forthesampleof x¼5 at%.The refractive index,extinctioncoefficient andUrbachtailarealsoaffectedbyIndoping.Theelectricalconductivityenhancesatlowerdopinglevel due toformationofthermallyactivateddonorlevels,despitethis,thephaseseparationandphononscatteringarefactorsresponsiblefor conductivity decreaseathigherIncontent. إقراء المزيد