diab_a_k

عبده كمال دياب حماية

استاذ - قسم الفيزياء

كلية العلوم

العنوان: جامعة سوهاج - كلية العلوم بسوهاج - قسم الفيزياء

30

إعجاب
8 3 10 13 2 8 775 302
109

أضيف حديثا
  • المقررات الدراسية 8
  • ملحقات المقررات الدراسية 3
  • واجبات المقررات الدراسية 10
  • المنشورات و المؤلفات 13
  • ساعات مكتبية 2
  • الاعلانات 8
  • عدد الملفات المرفوعه 5
  • كل التنزيلات 39

Determination of the intrinsic parameters of SnBi4Se7 via the characterization of electrical properties

2008 | الكلمات المفتاحية DOI:10.1063/1.2905262,
Determination of the intrinsic parameters of SnBi4Se7 via the characterization of electrical properties
I–Vmeasurements and temperature dependence of electrical conductivity on polycrystalline samples of Bi2Se3 and SnBi4Se7 have been performed. From the analysis of the temperature dependence of electron concentration in the activation regime above room temperature, the effective massm e* has been determined. Some intrinsic and contact properties such as barrier heights, ideality factors, and carrier concentrations have been investigated by usingI–Vcharacteristics. ... إقراء المزيد

Structural and optical properties of Ge-As-Te thin films

2006 | الكلمات المفتاحية glasses – 61.10.-i X-ray diffr, 73.61.Jc Amorphous semiconduct, 78.20.-e Optical properties of, Ef Cold working, work hardenin, post-deformation annealing, qu, quenching, tempering recovery, , tempering recovery, and crysta,
Structural and optical properties of Ge-As-Te thin films
Abstract.Chalcogenide glasses with Ge10AsxTe90−x(x= 20, 25, 30, 35, 40, 45 and 55 at.%) were prepared by melt quenching technique. The glass transition temperature, the crystallization temperature, the melting temperature and the glass-forming tendency were determined from the differential scanning calorimetry measurements. The structural and optical properties of Ge10AsxTe90−x thin films prepared by electron beam evaporation were studied. X-ray diffraction showed ... إقراء المزيد

Conduction behaviour and thermoelectric power of Agx(As0.4Se0.6)100Kxchalcogenide system

2005 | الكلمات المفتاحية 61.43.Dq; 66.10.Ed; 72.15.Cz;,
Conduction behaviour and thermoelectric power of Agx(As0.4Se0.6)100Kxchalcogenide system
Abstract Chalcogenide bulk alloys of Agx(As0.4Se0.6)100-x (x=5, 7.5, 10, 12.5, 15 and 17.5) system were prepared by the conventional meltquench technique. The d.c. electrical conductivity (s) and thermoelectric power (TEP) measurements were carried out in the temperature range from 83 to 373 K and from 253 to 373 K, respectively. Variations of bothsand TEP with ambient temperature proved the p-type ... إقراء المزيد