Crystallization Kinetics and Some Physical Properties of As‐Prepared and Annealed Ge–Sb–Se Chalcogenide Glasses

The crystallization kinetics, electrical and optical properties of as‐prepared and annealed Ge_xSb_40—xSe₆₀ (22.5 at% ≤ x ≤ 32.5 at%) chalcogenide system have been studied. The kinetic studies using differential scanning calorimetry technique and X‐ray diffraction examinations revealed that all the considered glasses can be crystallized to Sb₂Se₃ and GeSe₂ phases. Electrical conductivity measurements elucidated that the Ge_xSb_40—xSe₆₀ amorphous thin films behave as semiconductor materials especially when the temperature of measurement exceeds a certain value which depends slightly on composition. The absorption coefficient–photon energy dependence of the investigated thin films could be described by the Tauc equation. The effect of high annealing temperature on both, the activation energy of the electrical conduction and the electronic energy gap have been reported and discussed.