In sufficiently wide temperature range (103-483 K), both dc electrical conductivity and thermoelectric power of Ge 40-xSn xSe 60 (X = 14, 12, 10, 8 and 6 at. %) have been investigated. Variations of both electrical and thermoelectric parameters with ambient temperature proved the N-type semiconductor behaviour of those materials. The current density electric field characteristics were found non-linear. The activation energies calculated from both electrical conductivity E σ and thermoelectric power E s temperature dependencies seemed relatively small and dependent on both composition and the range of the temperature of measurements. The values of the temperature dependent parameter a(T) and the characteristic length (L) seemed relatively high with respect to other amorphous chalcogenides.