Tuning the morphology of ZnO nanostructure by In doping and the associated variation in electrical and optical properties.

In thiswork,Zn100
xInx (x¼0, 1,2.5,5and7.5at%)compoundshavebeeninitiallyalloyedbymeltingmethodandusedasprecursorsto
prepare differentnanostructuresofindium(In)dopedZnOusingchemicalvapordeposition(CVD).TheeffectofIncontentonthestructural,
morphological, opticalaswellaselectricalpropertieshasbeenstudied.XRDandRamanexaminationsdemonstratethesubstitutionofZnþ2 ions
by Inþ3 ions atlowerindiumconcentrations,whileIn2O3 appears asseparatephaseathigherInratios.Thenanowirestransformtonanoflakes
then nanoflowers astheInconcentrationincreases.Withregardtotheopticalproperties,thetransparencyincreaseswithincreasingInand
decreases thereafter.TheopticalbandgapvaluesincreasewithIncontentreachingitsmaximumvalue(3.28eV)forthesampleof x¼5 at%.The
refractive index,extinctioncoefficient andUrbachtailarealsoaffectedbyIndoping.Theelectricalconductivityenhancesatlowerdopinglevel
due toformationofthermallyactivateddonorlevels,despitethis,thephaseseparationandphononscatteringarefactorsresponsiblefor
conductivity decreaseathigherIncontent.