Physical properties of In35Sb45Se20xTexthin films with different compositions (x¼2.5, 5, 7.5, 10, 12.5
and 15 at%) prepared by electron beam evaporation method are studied. X-ray diffraction results
indicate that the as-evaporated films depend on the Te content and the crystallized compounds consist
mainly of Sb2Se3with small amount of Sb2SeTe2. Transmittance and reflectance of the films are found to
be thickness dependent. Optical-absorption data indicate that the absorption mechanism is direct
transition. Optical band gap values decrease with increase in Te content as well as with increase in film
thickness.