Magnetoresistive properties of Ni-doped La0.7Sr0.3MnO3 manganites

La_0.7Sr_0.3Mn_1−x Ni _x O₃ (x = 0, 0.025, 0.050 and 0.075) ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni²⁺ leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni²⁺ doping increases the electrical resistivity, decreases the semiconductor–metal transition temperature (T _ms) and relatively enhances the room temperature magnetoresistance (MR), especially in x = 0.025 and around T _ms. With respect to conduction mechanism, the small polaron hopping (SPH) and the variable range hopping (VRH) models were used to examine conduction in the semiconducting region.