The effect of (Pb) addition on the zero thermopower temperature …To c † and room temperature Vickers microhardness (VHN) of superconducting specimens of different nominal compositions based on the system Bi22xPbxSr2Ca2Cu3Oy …x ˆ 0:0; 0.1, 0.2, 0.3 and 0.5) were studied. The addition of (0.3Pb) resulted in an increase in To c from 93 to 113 K and a 2.85-fold ... إقراء المزيد

Dielectric properties of GeSnSechalcogenide samples إقراء المزيد

Composition, Temperature, and Bulk of dielectric Properties of YBaCuO powder Compacts إقراء المزيد

For bulk samples of the quenched TlzsCei4Sess either as-prepared or isochronically annealed for one hour at different temperatures up to 150 “C, the current-voltage characteristics at different temperatures of measurements (T) and of annealing (Tan) were non-linear especially when the applied potential difference exceeds certain value which is dependent on both T and T,,. The field dependence of the current ... إقراء المزيد

Effect of condition of preparation on the D.C Electrical Resistivity of YBaCuOPowder compacts إقراء المزيد

Chalcogenide glasses with composition Ge20Ses0_xTIx (x= 10, 15, 20, 25, 35%) have been prepared by the usual melt-quenching technique. Thin films of the mentioned compositions have been prepared by the electron beam evaporation. In addition, another set taken from the composition of X--30 at% with different thicknesses (d= 14.7, 30.0, 56.5, 70.0, 101.0, 180.0 nm) have been taken into consideration. ... إقراء المزيد

In sufficiently wide temperature range (103-483 K), both dc electrical conductivity and thermoelectric power of Ge 40-xSn xSe 60 (X = 14, 12, 10, 8 and 6 at. %) have been investigated. Variations of both electrical and thermoelectric parameters with ambient temperature proved the N-type semiconductor behaviour of those materials. The current density electric field characteristics were found non-linear. The ... إقراء المزيد

Conduction Behavior and Electrical Resistivity of powder Compacts Based on YBa2.5Cu3OX إقراء المزيد

Chalcogenide glasses with composition Ge20Ses0_xTIx (x= 10, 15, 20, 25, 35%) have been prepared by the usual melt-quenching technique. Thin films of the mentioned compositions have been prepared by the electron beam evaporation. In addition, another set taken from the composition of X--30 at% with different thicknesses (d= 14.7, 30.0, 56.5, 70.0, 101.0, 180.0 nm) have been taken into consideration. ... إقراء المزيد

Composition dependence of the D.C Electrical Resistivity of YBaCuO system. إقراء المزيد