Abstract The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO)1−x(In2O3)x have been grown by electron beam evaporation technique for different concentrations of In2O3 (x=0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from ...
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