Silicon thin films are currently used in different technological areas such as photovoltaic cells [1, 2], thin-film transistors [3], microelectromechanical systems [4], and Li-ion rechargeable batteries [5]. On the other hand, silicon dielectrics are important materials for both microelectronics and integrated optics. In particular, silicon dielectrics have been considered as an appropriate material for fabricating optical waveguides in broadband communications (telecom and datacom)[6–8]. The effects of ions, electrons, and other energetic particles are now widely utilized for substrate cleaning as well as to assist and control film growth. Some of the particles are not just assisting but they may condense and thereby become part of the growing film [9]. The role of nitrogen plasma-surface reactions is very important in various phenomena of technological interest such as corrosion, surface functionalization, and thin film growth. Inductively coupled radio frequency (rf) discharges have proven technological significance, for surface modification, fabrication of modern integrated circuit devices, and thin film deposition [10, 11]. The great majority of fundamental studies involve the interaction between nitrogen plasma species and solid surfaces, but there is a lack of specific correlation between optoelectronic properties and plasma parameters.