The effect of the In/Cd ratio on both the microstructure and the electrical conductivity parameters of CdS thin films, as a good material for optical windows, was investigated. A new preparation method of In-doped CdS films was used. The effects of annealing time and annealing temperature as well as of thin-film thickness on the mentioned physical properties were studied. Qualitatively, ... إقراء المزيد

The crystallization kinetics, electrical and optical properties of as‐prepared and annealed Ge_x_Sb40—_x_Se60 (22.5 at% ≤ _x_ ≤ 32.5 at%) chalcogenide system have been studied. The kinetic studies using differential scanning calorimetry technique and X‐ray diffraction examinations revealed that all the considered glasses can be crystallized to Sb2Se3 and GeSe2 phases. Electrical conductivity measurements elucidated that the Ge_x_Sb40—_x_Se60 amorphous thin films ... إقراء المزيد

Effects of Sb doping, sintering temperature and precoating with oxides on the optical and electrical properties of Sb-Sn-O thin films~ 100 nm thick deposited by electron beam from bulk samples prepared using a sintering technique are investigated and discussed. All films have partially amorphous structure. The quality of the films as transparent-conductive ones has been examined using the so-called factor ... إقراء المزيد

Effects of annealing and film thickness on the electrical and optical properties of Sb: SnO 2 films deposited by electron beam from bulk samples prepared using sintering technique have been investigated. A compromise between low resistivity and high transparency of the film has been studied using the factor of merit. This factor, which has been found maximum for film 100 ... إقراء المزيد

Chalcogenide glasses with composition Ge20Se80−_x_ Tl _x_ (_x_=10, 15, 20, 25, 35%) have been prepared by the usual melt-quenching technique. Thin films of the mentioned compositions have been prepared by the electron beam evaporation. In addition, another set taken from the composition of_X_=30 at % with different thicknesses (_d_=14.7, 30.0, 56.5, 70.0, 101.0, 180.0 nm) have been taken into consideration. ... إقراء المزيد

SEEBECK COEFFICIENT AND ELECTRICAL RESISTIVITY OF BI2TESE2 AND BI2TE2SE ALLOYS إقراء المزيد

The electrical resistivity, π, and Seebeck coefficient,_S_, of the system Sb2Se3 were measured in the ambient temperature range 323≤_T_≤573 K. Both parameters were found to be affected considerably by the temperature of annealing,_T_ a, in the range 493≤_T_a≤653 K and by the time of annealing,_t_ a, for periods extending to 16h. Additionally, both depended strongly on the ambient temperature. إقراء المزيد

Some optical parameters of Bi2Te2Se thin films, determined from the measured absorbance and transmittance at normal incidence in the visible spectral range, were studied as functions of film thickness and annealing temperature. These parameters were found to be sensitive to both film thickness and microstructure change caused by annealing in a film. The effect of thickness and temperature of annealing ... إقراء المزيد

Undoped and Sb-doped SnO2 films ∼100 nm thick have been deposited by electron beam evaporation from bulk samples prepared using sintering technique. Either undoped or Sb-doped SnO2 films are nearly amorphous, resistive and transparent. With increasing Sb content, the resistivity slightly decreases and then increases with further addition of Sb, which acts as donor and/or acceptor impurity atom in the ... إقراء المزيد

The thermal diffusivities, specific heats and thermal conductivities of the binary compositions Sb40Te60 and Sb40Se60 and the ternary composition Sb40Te30Se30 were measured in the range ∼320 to 500 K. It was found that the environmental temperature, the content of Se in the composition and the conditions of measurements are decisive factors greatly influencing both the values and the behaviour ot ... إقراء المزيد