The effect of using different types of window layer on the performance of thin-film solar cell based on CdTe

was studied. Here, we investigated Cadmium Sulphide (CdS), Zinc Selenide (ZnSe) and Zinc Sulphide (ZnS) as window

layer candidates. The calculations of short-circuit current density, internal quantum efficacy, external quantum efficient

and the solar cell efficacy were achieved based on the optical and recombination losses. The calculation of the optical

losses was performed considering the reflection process at the interfaces of the contacted layer and absorption process in

the frontal charge-collecting and window layers. The recombination loss estimates on both front and back surfaces of the

CdTe layer is based upon the physical parameters of the window/absorber junction and absorber layer. It was found that

the highest short-circuit current density of 26 mA/cm2, the lowest optical and recombination losses of 16% and

consequently the highest cell efficiency of about 21.3% were achieved for ZnS window layer. For CdS window layer, the

values of short-circuits current density, optical and recombination losses and cell efficiency were 23.38 mA/cm2, 25% and

19%, respectively. The corresponding values of ZnSe layer were between those of ZnS and CdS. These results show that

ZnS is considered a good alternative material for the traditional CdS window layer or at least it makes a promising alloy

with CdS.