Photo-thermoelastic interactions in a two-dimension semiconductor medium are studied by using mathematical methods in the context of coupled thermoelastic theory and plasma waves with one thermal relaxation time. The Laplace-Fourier transformations and eigenvalues approach are used to obtain the general solutions for any set of boundary conditions. The medium is initially assumed to be at rest and due to a moving thermal source with a constant speed, which are traction free. A semiconductor medium like as silicon has been considered. In the conclusion, the outcomes are represented graphically to show the influences of heat source speed and the relaxation time. The eigenvalues approach gives the analytical solution without any assumed restriction on the actual physical quantities.