Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifi cally, not at all for solution-processed/printed  transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly effi cient electrolyte-gating approach one can obtain printed and lowvoltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation.