Transparent conductive gallium-doped indium oxide nanowires for optoelectronic applications

Undoped and Ga-doped In₂O₃ nanowires (NWs) were synthesized by using vapor-liquid-solid (VLS) growth and were characterized as transparent conductive oxides for future generations of optoelectronic devices. A low amount of Ga was obtained due to the low solubility of Ga₂O₃ in In₂O₃. The incorporation of Ga into In₂O₃ nanowires decreases the grain size, the transmittance and the optical band gap. The Ga-doped In₂O₃ NWs exhibited a low sheet resistance of 12.2 ± 2 Ω/▭ and a mean transmittance value in the visible region of 77.1, which favor its use as a promising transparent conductive oxide.