Undoped and Ga-doped In2O3 nanowires (NWs) were synthesized by using vapor-liquid-solid (VLS) growth and were characterized as transparent conductive oxides for future generations of optoelectronic devices. A low amount of Ga was obtained due to the low solubility of Ga2O3 in In2O3. The incorporation of Ga into In2O3 nanowires decreases the grain size, the transmittance and the optical band gap. ... Read more